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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1373
DESCRIPTION *With TO-3PN package *Complement to type 2SD2066 *Wide area of safe operation APPLICATIONS *For high power amplification
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -160 -160 -5 -12 120 W UNIT V V V A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-25mA ;IB=0 IC=-8A; IB=-0.8A IC=-8A;VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0; f=1MHz;VCB=-10V 20 60 20 15 MIN -160
2SB1373
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB
TYP.
MAX
UNIT V
-2.0 -1.8 -50 -50
V V A A
200
MHz pF
400
hFE-1 Classifications Q 60-120 S 80-160 P 100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1373
Fig.2 outline dimensions
3


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